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SMV2023-230

Description
Variable Capacitance Diode, 22V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerSkyworks
Websitehttp://www.skyworksinc.com
Environmental Compliance
Download Datasheet Parametric View All

SMV2023-230 Overview

Variable Capacitance Diode, 22V, Silicon, Hyperabrupt

SMV2023-230 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerSkyworks
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CRDB-F2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor400
Maximum repetitive peak reverse voltage22 V
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
Silicon Low Capacitance
Hyperabrupt Junction Varactor Diodes
SMV2019 to SMV2023
Features
Octave Frequency Tuning from 0 to 10 Volts
Good Linearity Tuning Ratio Without
Compensation Network
Offered in Package Styles Suitable for a Wide
Range of Applications
Description
Alpha microwave hyperabrupt diodes are designed
for wideband tuning of microwave filters, resonators,
and local oscillators. Linear tuning, not possible with
conventional abrupt–junction tuning diodes, is
accomplished by maintaining an accurate silicon
doping profile using ion–implantation precision
control techniques.
This series of hyperabrupt diodes offer wide
bandwidth tuning with low bias voltage. For example,
a 22 volt hyperabrupt diode can provide the same
tuning variation as a 90 volt abrupt–junction diode.
When capacitance and tuning ratio values are equal,
a hyperabrupt diode will have a Q (measured at –4
volts, 50 MHz) approximately 1/2 to 1/3 that of an
abrupt–junction diode.
Maximum Ratings
Reverse Voltage, V
R
:
Forward Current, I
F
:
Power Dissipation at 25°C:
Operating Temperature:
Storage Temperature:
22V
100 mA
250 mW
–55 to 150°C
–65 to 200°C
These diodes are available in many Alpha ceramic
packages. They can be supplied in chip form or
mounted on a variety of packages. All chips are
passivated with silicon dioxide for reliability and low
leakage current.
The specifications table indicates chip capacitance
measured at 1 MHz. For packaged varactors add
appropriate package capacitance, e.g., 0.22 pF for
package 210, to obtain total capacitance.
Electrical Specifications at 25°C
Square Passivated Silicon Chips
Part
Number
"
SMV2019–000
SMV2020–000
SMV2021–000
SMV2022–000
"
SMV2023–000
V
B
@ 10
µA
(V)
Min.
22
22
22
22
22
I
R
@ 17.6V
(nA)
Max.
50
50
50
50
50
Min.
0.68
1.13
1.58
2.48
4.28
C
J
@ 4V
(pF)
Max.
0.88
1.43
1.98
3.08
5.28
Min.
0.13
0.23
0.32
0.48
0.78
C
J
@ 20V
(pF)
Max.
0.23
0.33
0.44
0.68
1.08
Q
@ 4V
50 MHz
Min.
500
500
500
400
400
Chip
Outline
Number
N mber
149–801
149–801
149–801
149–801
149–801
"
Available through distribution.
2–10
Alpha Industries
[617] 935 5150
Fax
[617] 824 4579
E-mail
sales@alphaind.com
Visit our web site:
www.alphaind.com
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