FM120-M
DTA123JE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Features
board space.
optimize
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
•
Guardring for overvoltage protection.
Epoxy meets UL 94 V-0 flammability rating
•
Ultra high-speed switching.
Moisure Sensitivity Level 1
chip, metal silicon junction.
•
Silicon epitaxial planar
Built-in
Lead-free parts
enable the configuration of an inverter circuit
•
bias resistors
meet environmental standards of
without
MIL-STD-19500 /228
input resistors
connecting external
•
RoHS product
consist of thin-film resistors with complete
•
The bias resistors
for packing code suffix "G"
Halogen free product for packing code
input.
isolation to allow negative biasing of the
suffix "H"
They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
•
Only the on/off
UL94-V0 rated flame retardant
operation, making
•
Epoxy :
conditions need to be set for
device design
Molded plastic, SOD-123H
•
Case :
easy
Absolute maximum ratings @ 25
solderable per MIL-STD-750 ,
•
Terminals :Plated terminals,
Pb-Free package is available
•
Low power loss, high efficiency.
RoHS
High current capability, low forward voltage drop.
•
product for packing code suffix ”G”
•
High surge capability.
Halogen free product for packing code suffix “H”
0.146(3.7)
0.130(3.3)
SOT-523
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.014(0.35)
Typ.
0.031(0.8)
.010(0.25)
.043(1.10)
.004(0.10)MIN.
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-1.1
14
-0.3
-3.6
20
-0.5
---
2.86
26
---
Unit
13
V
30
V
Symbol
Parameter
Min
Typ
Marking Code
---
V
I(off)
-0.5
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
RRM
---
V
I(on)
(V
O
=-0.3V, I
O
=-5mA)
---
V
O(on)
Output voltage (I
O
/I
---
RMS
---
Maximum RMS Voltage
=
I
-5mA/-0.25mA
V
I
I
=
I
-5V)
Input current (V
---
---
Maximum DC Blocking Voltage
V
DC
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum Average Forward
(V
O
=-5V, I
Current
G
I
DC current gain
Rectified
O
-10mA)
=
80
I
O
---
R
1
Input resistance
1.54
2.2
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
17
I
FSM
21
superimposed on rated
frequency
method)
Transition
load (JEDEC
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
.069(1.75)
.057(1.45)
Symbol
Parameter
Min
Typ
Max
Unit
Method 2026
.035(0.90)
V
CC
Supply voltage
---
-50
---
V
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
-12
V
V
IN
Input voltage
---
5
-100
I
O
•
Mounting Position : Any
Output current
---
---
mA
I
C(MAX)
-100
•
Weight
dissipation
P
d
Power
: Approximated 0.011 gram
---
150
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM
T
stg
Storage temperature
RATINGS AND ELECTRICAL CHARACTERISTICS
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
10
100
100
115
150
105
150
120
200
140
200
21
V
mA
30
A
.008(0.20)
70
.004(0.10)
K¡
MHz
-55 to
.014(0.35)
+150
.004(0.10)MAX.
.035(0.90)
.028(0.70)
0.9
0.92
C
J
T
J
TSTG
-55 to +125
40
120
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
-
65
to +175
.006(0.15)
*Marking: E32
F
V
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.50
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.70
0.85
Dimensions in inches and (millimeters)
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTA123JE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
京公网安备 11010802033920号
EEWORLD
