K6F4016U6F-EF55 datasheet, PDF

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K6F4016U6F-EF55: DescriptionStandard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48; Categorystorage storage; File Size164KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F4016U6F-EF55 Overview

Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48

K6F4016U6F-EF55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA48,6X8,30
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	7 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum standby current	0.000003 A
Minimum standby current	1.5 V
Maximum slew rate	0.027 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm

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K6F4016U6F Family

Document Title

Preliminary

CMOS SRAM

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

0.1

Initial Draft

Revised

- Deleted 45ns speed product

Draft Date

December 14, 2001

August 27, 2002

Remark

Preliminary

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

-1-

Revision 0.1

August 2002

K6F4016U6F-EF55 Related Products

	K6F4016U6F-EF55	K6F4016U6F-EF700	K6F4016U6F-EF70	K6F4016U6F-EF550
Description	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	VFBGA, BGA48,6X8,30	VFBGA,	VFBGA, BGA48,6X8,30	VFBGA,
Contacts	48	48	48	48
Reach Compliance Code	unknown	compliant	unknown	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	55 ns	70 ns	70 ns	55 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
length	7 mm	7 mm	7 mm	7 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	256KX16	256KX16	256KX16	256KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm
Maximum supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	6 mm	6 mm	6 mm	6 mm

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