AOD4184/AOI4184
40V N-Channel MOSFET
General Description
The AOD4184/AOI4184 used advanced trench technology
and design to provide excellent R
DS(ON)
with low gate
charge. With the excellent thermal resistance of the DPAK
package, those devices are well suited for high current
load applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
50A
< 8mΩ
< 11mΩ
100% UIS Tested
100% R
g
Tested
TO252
DPAK
TopView
D
D
Bottom View
Top View
TO-251A
IPAK
D
Bottom View
D
G
S
G
S
G
S
G
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
50
40
120
6.5
5
35
61
50
25
2.3
1.5
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
44
2.4
Max
22
55
3
Units
°C/W
°C/W
°C/W
Rev0 : April 2009
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Page 1 of 6
AOD4184/AOI4184
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=15A
Forward Transconductance
V
DS
=5V, I
D
=20A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
120
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
150
80
2
21
V
GS
=10V, V
DS
=20V, I
D
=20A
10
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=40V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
T
J
=125°C
1.7
120
6.7
11
8.5
37
0.72
1
20
1500
215
135
3.5
27.2
13.6
4.5
6.4
6.4
V
GS
=10V, V
DS
=20V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=100A/µs
2
Min
40
Typ
Max
Units
V
1
5
100
2.2
2.6
8
13
11
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1800
280
190
5
33
16
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
17.2
29.6
16.8
20
18
29
26
38
34
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
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Page 2 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
4V
60
3.5V
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
9
V
GS
=4.5V
2.2
20
V
GS
=3V
0
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
5V
80
100
V
DS
=5V
I
D
(A)
60
I
D
(A)
40
125°C
25°C
Normalized On-Resistance
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
V
GS
=10V
I
D
=20A
R
DS(ON)
(m
Ω
)
8
7
6
5
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=10V
17
5
2
V
GS
=4.5V
10
I
D
=15A
100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
I
D
=20A
20
1.0E+02
1.0E+01
1.0E+00
40
125°C
R
DS(ON)
(m
Ω
)
I
S
(A)
15
125°C
10
25°C
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
25°C
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
0.2
1.2
Rev 0 : Aug 2009
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Page 3 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
Capacitance (pF)
2500
8
2000
C
iss
V
GS
(Volts)
6
1500
4
1000
C
oss
500
C
rss
2
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
20
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
40
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
10µs
Power (W)
1000
800
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
DC
T
J(Max)
=175°C
T
C
=25°C
0.1
1
V
DS
(Volts)
10
10µs
100µs
1ms
10ms
600
400
200
0
1E-05 0.0001 0.001
17
5
2
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJ
R
θJC
=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
Single Pulse
0.01
0.00001
P
D
T
0.0001
0.001
0.01
T
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Aug 2009
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Page 4 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
I
AR
(A) Peak Avalanche Current
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
T
A
=25°C
T
A
=100°C
T
A
=125°C
T
A
=150°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
60
50
Current rating I
D
(A)
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Power Dissipation (W)
1000
T
A
=25°C
Power (W)
100
10
17
5
2
10
1
0.001
0.1
10
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
18
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
on
10
0.01
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Aug 2009
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