30V, 0.0175ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8
Parameter Name | Attribute value |
Maker | Renesas Electronics Corporation |
Parts packaging code | SOIC |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Contacts | 8 |
Reach Compliance Code | unknown |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (Abs) (ID) | 11 A |
Maximum drain-source on-resistance | 0.0175 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MS-012AA |
JESD-30 code | R-PDSO-G8 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 2.5 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |