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ITF86182SK8T

Description
30V, 0.0175ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size688KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

ITF86182SK8T Overview

30V, 0.0175ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8

ITF86182SK8T Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)11 A
Maximum drain-source on-resistance0.0175 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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