SGS6N60UFDTU datasheet, PDF - EEWORLD Datasheet

SGS6N60UFDTU: DescriptionInsulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，11 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220F
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Shell connection	ISOLATED
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	202 ns
Nominal on time (ton)	54 ns

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