VN0808L-GP003 datasheet, PDF - EEWORLD Datasheet

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VN0808L-GP003: DescriptionSmall Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size545KB，3 Pages; ManufacturerSupertex

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VN0808L-GP003 Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3

VN0808L-GP003 Parametric

Parameter Name	Attribute value
Maker	Supertex
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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Supertex inc.

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

ISS

and fast switching speeds

VN0808

General Description

►

Excellent thermal stability

►

Integral source-drain diode

►

High input impedance and high gain

Applications

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

►

Motor controls

►

Converters

►

Amplifiers

►

Switches

►

Power supply circuits

►

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Ordering Information

Part Number

VN0808L-G

VN0808L-G P002

VN0808L-G P003

VN0808L-G P005

VN0808L-G P013

VN0808L-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Package Option

TO-92

Packing

1000/Bag

Product Summary

DSS

/BV

DGS

80V

DS(ON)

(max)

(min)

DSS

4.0Ω

1.5A

TO-92

2000/Reel

Pin Configuration

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Value

DSS

DGS

±30V

-55

C to +150

GATE

TO-92

Product Marking

Y YWW

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Si VN

0808L

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92

Typical Thermal Resistance

Package

TO-92

Doc.# DSFP-VN0808

B081913

Package may or may not include the following marks: Si or

132

C/W

Supertex inc.

www.supertex.com

VN0808L-GP003 Related Products

	VN0808L-GP003	VN0808L-GP014	VN0808L-GP002	VN0808L-GP005	VN0808L-GP013
Description	Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3
Maker	Supertex	Supertex	Supertex	Supertex	Supertex
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V	80 V	80 V	80 V
Maximum drain current (ID)	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Maximum drain-source on-resistance	4 Ω	4 Ω	4 Ω	4 Ω	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF	10 pF	10 pF	10 pF	10 pF
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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