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2SD1001EL-AY

Description
TRANSISTOR,BJT,NPN,80V V(BR)CEO,300MA I(C),SOT-89
CategoryDiscrete semiconductor    The transistor   
File Size332KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SD1001EL-AY Overview

TRANSISTOR,BJT,NPN,80V V(BR)CEO,300MA I(C),SOT-89

2SD1001EL-AY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)0.3 A
ConfigurationSingle
Minimum DC current gain (hFE)135
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountYES
Base Number Matches1

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