AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
C
V
CES
= 600V
I
C(Nominal)
= 24A
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
C
C
V
CE(on)
typ. = 1.57V
C
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
Applications
•
Air Conditioning Compressor
E
C
G
TO-220AB
AUIRGB4062D1
E
G
D
2
Pak
AUIRGS4062D1
TO-262
E
C
G
AUIRGSL4062D1
Ordering Information
Base part number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
G
Gate
Quantity
50
50
50
800
800
C
Collector
E
Emitter
Complete Part Number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
AUIRGS4062D1TRL
AUIRGS4062D1TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
600
59
39
24
72
96
59
39
96
±20
±30
246
123
-55 to +175
300
10 lbf·in (1.1N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
62
Max.
0.61
1.2
–––
–––
°C/W
Units
V
W
A
Units
V
c
d
Continuous Gate-to-Emitter Voltage
°C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case (IGBT)
e
Thermal Resistance Junction-to-Case (Diode)
e
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient
*Qualification
standards can be found at http://www.irf.com/
1
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©
2013 International Rectifier
May 02, 2013
AUIRGB/S/SL4062D1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
gfe
I
CES
V
FM
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.3
1.57
1.87
1.94
—
-17
12
1.0
3.5
1.57
1.40
1.47
—
Max. Units
—
—
1.77
—
—
6.5
—
—
25
—
—
—
—
±100
nA
V
V
S
μA
mA
V
V
Conditions
V
GE
= 0V, I
C
= 100μA
e
V/°C V
GE
= 0V, I
C
= 10mA (25°C-175°C)
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 700μA
V
CE
= 50V, I
C
= 24A, PW = 20μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 24A
I
F
= 19A
I
F
= 24A, T
J
= 175°C
V
GE
= ±20V
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
I
GES
Gate-to-Emitter Leakage Current
—
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
51
14
21
532
311
843
19
24
90
23
726
549
1275
12
23
92
84
1487
118
44
Max. Units
77
21
32
754
526
1280
36
41
109
40
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp
600V
ns
μJ
ns
μJ
nC
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 210μH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 210μH, T
J
= 25°C
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, L= 210μH,T
J
= 175°C
eÃ
Energy losses include tail & diode reverse recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
FULL SQUARE
Rg = 10Ω, V
GE
= +20V to 0V
5
—
—
—
—
773
102
32
—
—
—
—
μs
μJ
ns
A
V
CC
= 400V, Vp
Ã
600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A
V
GE
= 15V, Rg = 10Ω, L =210μH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 210μH, R
G
= 50Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
2
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©
2013 International Rectifier
May 02, 2013
AUIRGB/S/SL4062D1
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
100
80
80
T J = -40°C
ICE (A)
60
60
T J =175°C
T J = 25°C
40
IF (A)
40
20
0
20
0
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20μs
8
Fig. 8
- Typ. Diode Forward Characteristics
tp = 20μs
8
6
ICE = 12A
4
ICE = 24A
ICE = 48A
6
ICE = 12A
ICE = 24A
ICE = 48A
2
VCE (V)
VCE (V)
4
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
8
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
100
T J = 25°C
T J = 175°C
6
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
80
60
4
40
2
20
0
5
10
VGE (V)
15
20
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20μs
4
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©
2013 International Rectifier
May 02, 2013
Power technology
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