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JAN1N5420E3

Description
4.5 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size248KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet View All

JAN1N5420E3 Overview

4.5 A, 50 V, SILICON, RECTIFIER DIODE

1N5415 thru 1N5420
VOIDLESS HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category
1”
metallurgical bond. These devices are also available in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
Popular JEDEC registered 1N5415 thru 1N5420 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Working Peak Reverse Voltage 50 to 600 volts.
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5415US – 1N5420US
APPLICATIONS / BENEFITS
Fast recovery 3 amp 50 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Forward Surge Current @ 8.3 ms half-sine
(4)
o
Average Rectified Forward Current
@ T
A
= +55 C
@ T
A
= +100
o
C
Working Peak Reverse Voltage
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
(5)
Maximum Reverse Recovery Time
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJL
I
FSM
(2, 3)
I
O
(3)
I
O
V
RWM
Value
-65 to +175
22
80
3
2
50
100
200
400
500
600
150
150
150
150
250
400
260
Unit
o
C
C/W
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
V
t
rr
ns
T
SP
o
C
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 1 of 5
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