Operating and Storage Temperature . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
450
500
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA, (Figure 7)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
2.0
-
-
-
-
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
-
-
-
-
-
-
-
-
-
-
30
40
90
50
-
-
-
-
-
4.0
1
25
±100
3
9.0
45
60
135
75
750
150
100
V
V
V
µA
µA
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM3N45, RFP3N45
RFM3N50, RFP3N50
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
RFM3N45, RFM3N50
RFP3N45, RFP3N50
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
V
GS
=
±20V,
V
DS
= 0V
I
D
= 3A, V
GS
= 10V, (Figures 5, 6)
I
D
= 3A, V
GS
= 10V
V
DD
=
250V, I
D
≈
1.5A, R
G
= 50Ω, V
GS
= 10V
R
L
= 165Ω
(Figures 10, 11, 12)
-
-
-
-
1.67
2.083
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
I
SD
= 1.5A
I
SD
= 4A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
800
MAX
1.4
-
UNITS
V
ns
2
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
Unless Otherwise Specified
3.5
3
I
D
, DRAIN CURRENT (A)
RFM3N45, RFM3N50
2.5
RFP3N45, RFP3N50
2
1.5
1
0.5
0
25
0.6
0.4
0.2
0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)
I
D
(MAX.) CONTINUOUS
4
V
GS
= 10V
V
GS
= 6V
3
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
2
V
GS
= 5V
1
V
GS
= 4V
100
1000
0
0
5
10
15
20
25
10
DC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
OP
E
RA
TIO
N
1
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
4
ON RESISTANCE (Ω)
3
TC = -40
o
C
2
TC = 25
o
C
TC = 125
o
C
1
r
DS(ON)
, DRAIN TO SOURCE
V
DS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
6
5
4
3
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE < 2%
T
C
= 125
o
C
T
C
= 25
o
C
2
T
C
= -40
o
C
1
0
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0
1
2
3
4
5
6
7
I
D
, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Typical Performance Curves
2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 3A, V
GS
=10V
PULSE DURATION = 80µs
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
Unless Otherwise Specified
(Continued)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
DS
= 10V
I
D
= 250µA
1
0.5
0
-50
0
50
100
150
200
0.6
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
700
C, CAPACITANCE (pF)
600
500
400
300
200
100
0
0
10
20
30
40
C
OSS
C
RSS
50
60
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
DD
= BV
DSS
375
GATE
SOURCE
VOLTAGE
R
L
= 167Ω
I
G(REF)
= 0.45mA
VGS = 10V
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
8
V
DD
= BV
DSS
6
250
4
125
2
DRAIN SOURCE VOLTAGE
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
70
80
90
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
22 countries!
2,350 exhibitors!
53 forums and special events!
The 2022 China International Industry Fair (CIIF) is officially launched!Meeting time: November 30-December 4
Conference Venue: Shanghai N...
I have been a member of EEWorld for several years now, and I have a lot of feelings: There are many activities in the EEWorld community, which are very helpful to engineers. Through various activities...
Accurate current measurements are not as easy as voltage measurements, and this becomes even more difficult when the current being measured is flowing through a load connected to a relatively high sup...
Power management for electrical devices is relatively simple: just turn on and off. But with computers, especially those running Windows , things get more complicated. On is still on, of course. But f...
[i=s] This post was last edited by Lan Yuye on 2018-9-5 10:56 [/i] GD350 development board connects to cloud platform via WIFI Purpose: Expand sensors through GD350 development board, read parameters ...
[color=#333333]This is my first time posting for help on eeworld. Please give me some advice! I will correct any problems with the formatting of the question! ! [/color] [color=#333333]Background: [/c...
Industrial Control Electronics
京公网安备 11010802033920号
EEWORLD
