Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
350
400
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA (Figure 8)
V
DS
= Rated BV
DSS
, T
C
= 25
o
C
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
2
-
-
-
-
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
-
RFM7N35, RFM7N40
RFP7N35, RFP7N40
-
-
-
-
-
-
-
-
-
-
16
54
170
62
-
-
-
-
-
-
-
4
1
25
±100
0.75
5.25
45
75
250
100
1600
300
200
1.25
1.67
V
V
V
µA
µA
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM7N35, RFP7N35
RFM7N40, RFP7N40
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
V
GS
=
±20V,
V
DS
= 0V
I
D
= 7A, V
GS
= 10V (Figures 6, 7)
I
D
= 7A, V
GS
= 10V
V
DS
= 200V, I
D
≈
3.5A, R
G
= 50Ω,
R
L
= 56Ω, V
GS
= 10V
(Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
2. Pulse Test: Pulse Width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
870
MAX
1.4
-
UNITS
V
ns
5-2
RFM7N35, RFM7N40, RFP7N35, RFP7N40
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
8
7
6
RFM7N40
5
RFP7N40
4
3
2
1
0
25
0.8
0.6
0.4
0.2
0
0
50
100
150
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
T
C
= 25
o
C
T
J
= MAX RATED
I
D
, DRAIN CURRENT (A)
I
D
(MAX)
CONTINUOUS
DC
OP
ER
16
PULSE DURATION = 80µs
T
C
= 25
o
C
12
V
GS
= 7V TO 20V
8
V
GS
= 5V
4
V
GS
= 4V
0
1000
0
4
8
12
16
20
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
10
1
OPERATION IN
THIS AREA IS
LIMITED BY r
DS(ON)
AT
IO
N
RFM7N35, 40
RFP7N35, 40
0
RFM7N35, RFP7N35
RFM7N40, RFP7N40
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
16
V
DS
= 10V
PULSE DURATION = 250µs
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
1.8
T
C
= 125
o
C
1.4
V
GS
= 10V
PULSE DURATION = 250µs
12
T
C
= 25
o
C
8
T
C
= 125
o
C
4
T
C
= -40
o
C
1
T
C
= 25
o
C
T
C
= -40
o
C
0.6
0
0
2
4
6
V
GS
, GATE TO SOURCE (V)
8
10
0.2
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3
RFM7N35, RFM7N40, RFP7N35, RFP7N40
Typical Performance Curves
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2
V
GS
= 10V
I
D
= 7A
NORMALIZED GATE
THRESHOLD VOLTAGE
Unless Otherwise Specified
(Continued)
1.4
I
D
= 250µA
1.2
1.5
1
1
0.8
0.5
0.6
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
200
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1600
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
C
RSS
0
0
10
20
30
V
DS
, DRAIN TO SOURCE (V)
40
50
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
400
BV
DSS
300
V
DD
= V
DSS
GATE
TO
SOURCE
VOLTAGE
10
R
L
= 57Ω
I
G(REF)
= 0.45mA
V
GS
= 10V
V
DD
= V
DSS
8
V
DS
, (V)
6
200
0.75 V
DSS
0.50 V
DSS
100
0.25 V
DSS
DRAIN TO SOURCE VOLTAGE
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
2
4
V
GS
, (V)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
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