RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Skyworks |
package instruction | DISK BUTTON, O-CRDB-F4 |
Reach Compliance Code | unknown |
Shell connection | SOURCE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 6 V |
Maximum drain current (Abs) (ID) | 0.09 A |
FET technology | HIGH ELECTRON MOBILITY |
highest frequency band | X BAND |
JESD-30 code | O-CRDB-F4 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 175 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Peak Reflow Temperature (Celsius) | 245 |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 0.3 W |
Minimum power gain (Gp) | 12 dB |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | RADIAL |
Maximum time at peak reflow temperature | 30 |
Transistor component materials | SILICON |