ZXMN10A11GFTA datasheet, PDF - EEWORLD Datasheet

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ZXMN10A11GFTA: DescriptionSmall Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size1MB，7 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZXMN10A11GFTA Overview

Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ZXMN10A11GFTA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	1.3 A
Maximum drain current (ID)	1.3 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3.9 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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ZXMN10A11G

100V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

= 100V; R

DS(ON)

= 0.6

DESCRIPTION

= 1.8A

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT223 package

SOT223

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Relay and Solenoid driving

•

Motor control

ORDERING INFORMATION

DEVICE

ZXMN10A11GFTA

ZXMN10A11GFTC

REEL

SIZE

7”

13”

TAPE

WIDTH

12mm

QUANTITY

PER REEL

1000 units

4000 units

DEVICE MARKING

•

ZXMN

10A11

Top View

ISSUE 1 - MARCH 2002

ZXMN10A11GFTA Related Products

	ZXMN10A11GFTA	ZXMN10A11GFTC	UZXMN10A11GFTA	UZXMN10A11GFTC
Description	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	1.3 A	1.3 A	1.3 A	1.3 A
Maximum drain-source on-resistance	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Diodes Incorporated	-	Diodes Incorporated	Diodes Incorporated

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