UZXMN10A11GFTA datasheet, PDF - EEWORLD Datasheet

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UZXMN10A11GFTA: DescriptionSmall Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size1MB，7 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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UZXMN10A11GFTA Overview

Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

UZXMN10A11GFTA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Objectid	1810803324
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	not_compliant
ECCN code	EAR99
compound_id	11011541
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	1.3 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

UZXMN10A11GFTA Related Products

	UZXMN10A11GFTA	ZXMN10A11GFTC	UZXMN10A11GFTC	ZXMN10A11GFTA
Description	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	not_compliant	compliant	not_compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	1.3 A	1.3 A	1.3 A	1.3 A
Maximum drain-source on-resistance	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Diodes Incorporated	-	Diodes Incorporated	Diodes Incorporated

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