Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 9 X 7 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SPANSION |
Objectid | 2017633255 |
Parts packaging code | BGA |
package instruction | 9 X 7 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56 |
Contacts | 56 |
Reach Compliance Code | unknown |
compound_id | 6442609 |
Maximum access time | 70 ns |
Other features | PSRAM IS ORGANIZED AS 2M X 16 |
JESD-30 code | R-PBGA-B56 |
JESD-609 code | e1 |
length | 9 mm |
memory density | 67108864 bit |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+PSRAM |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 56 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 4MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA56,8X8,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 3 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum standby current | 0.000005 A |
Maximum slew rate | 0.07 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 2.7 V |
Nominal supply voltage (Vsup) | 3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
width | 7 mm |