MCR100-7 datasheet, PDF - EEWORLD Datasheet

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MCR100-7: Description0.8 A, 400 V, SCR, TO-226AA; Categoryaccessories; File Size50KB，3 Pages; ManufacturerNanjing International Group Co.,Ltd

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MCR100-7 Overview

0.8 A, 400 V, SCR, TO-226AA

0.8 A, 400 V, 可控硅整流器, TO-226AA

MCR100-7 Parametric

Parameter Name	Attribute value
Maximum DC trigger current	0.0500 mA
Number of terminals	3
Processing package description	LEAD FREE, PLASTIC, TO-92, 3 PIN
each_compli	Yes
EU RoHS regulations	Yes
state	Active
Trigger type	SCR
structure	SINGLE
jedec_95_code	TO-226AA
jesd_30_code	R-PBCY-T3
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Minimum operating temperature	-40 Cel
Maximum operating temperature	110 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	CYLINDRICAL
eak_reflow_temperature__cel_	255
qualification_status	COMMERCIAL
Off-state repetitive peak voltage	400 V
Reverse repetitive peak voltage	400 V
Effective maximum current	0.8000 A
surface mount	NO
terminal coating	NOT SPECIFIED
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
dditional_feature	SENSITIVE GATE

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MCR100-3 … MCR100-8

TO-92 Plastic Package

Weight approx. 0.19g

MAXIMUM RATINGS (T

=25°C unless otherwise noted.)

Rating

Peak Repetitive Forward and Reverse Blocking

Voltage, Note 1

=25 to 125°C, R

=1KΩ)

MCR100-3

MCR100-4

MCR100-5

MCR100-6

MCR100-7

MCR100-8

Forward Current RMS

(All Conduction Angles)

Peak Forward Surge Current, T

25°C

(1/2 Cycle, Sine Wave, 60Hz)

Circuit Fusing (t=8.3ms)

Peak Gate Power - Forward, T

=25°C

Average Gate Power - Forward, T

=25°C

Peak Gate Current - Forward, T

=25°C

(300μs,120PPS)

Peak Gate Voltage - Reverse

Operating Junction Temperature Range @ Rated V

RRM

and V

DRM

Storage Temperature Range

T(RMS)

TSM

GF(AV)

GFM

GRM

Symbol

Value

100

Unit

DRM

and

RRM

200

300

400

500

600

0.8

0.415

0.1

0.01

-40 to +125

-40 to +150

Amps

Watts

Watt

Amp

Volts

°C

Volts

Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied

concurrent with negative potential on the anode.

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