AUTOMOTIVE GRADE
PD -
97718A
AUIRLS3036
Features
●
●
●
●
●
●
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HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
60V
1.9m
2.4m
270A
195A
c
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
G
D
S
D
2
Pak
AUIRLS3036
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Max.
270
190
195
1100
380
2.5
±16
290
c
Units
A
d
W
W/°C
V
mJ
A
mJ
V/ns
d
e
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
f
l
See Fig. 14, 15, 22a, 22b
8.0
-55 to + 175
°C
300
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
11
k
Parameter
Typ.
Max.
0.40
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
12/05/11
AUIRLS3036
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
R
G(int)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
–––
1.0
340
–––
Conditions
–––
–––
–––
–––
––– –––
V V
GS
= 0V, I
D
= 250μA
0.061 ––– V/°C Reference to 25°C, I
D
= 5mA
1.9
2.4
V
GS
= 10V, I
D
= 165A
m
V
GS
= 4.5V, I
D
= 140A
2.2
2.8
–––
2.5
V V
DS
= V
GS
, I
D
= 250μA
––– –––
S V
DS
= 10V, I
D
= 165A
2.0
–––
–––
20
V
DS
= 60V, V
GS
= 0V
μA
––– 250
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
––– 100
nA
––– -100
V
GS
= -16V
g
g
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
91
140
–––
31
–––
–––
51
–––
–––
40
–––
–––
66
–––
––– 220 –––
––– 110 –––
––– 110 –––
––– 11210 –––
––– 1020 –––
––– 500 –––
––– 1430 –––
––– 1880 –––
Conditions
I
D
= 165A
V
DS
= 30V
nC
V
GS
= 4.5V
I
D
= 165A, V
DS
=0V, V
GS
= 4.5V
V
DD
= 39V
I
D
= 165A
ns
R
G
= 2.1
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
pF ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
g
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
270
Conditions
MOSFET symbol
D
Ãe
A
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
S
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 165A, V
GS
= 0V
T
J
= 25°C
V
R
= 51V,
–––
62
–––
ns
T
J
= 125°C
I
F
= 165A
–––
66
–––
di/dt = 100A/μs
T
J
= 25°C
––– 310 –––
nC
T
J
= 125°C
––– 360 –––
–––
4.4
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1100
showing the
integral reverse
G
g
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.021mH
R
G
= 25, I
AS
= 165A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
165A, di/dt
430A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400μs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as
11
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive
avalanche performance.
R
JC
value shown is at time zero.
2
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AUIRLS3036
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D
2
Pak
MSL1
Class M4 (+/- 800V)
†††
AEC-Q101-002
Class H3A (+/- 6000V)
†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLS3036
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
2.7V
2.7V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
10
0.1
1
60μs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 165A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
1.5
1
T J = 25°C
VDS = 25V
60μs
PULSE WIDTH
1.0
0.1
1
2
3
4
5
6
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
5.0
ID= 165A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 48V
VDS= 30V
C, Capacitance (pF)
10000
Ciss
3.0
Coss
1000
Crss
2.0
1.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRLS3036
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
1msec
100
Limited by
package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
2.5
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
1
VGS = 0V
0.1
VSD, Source-to-Drain Voltage (V)
10msec
DC
0
1
10
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
75
Id = 5mA
VDS, Drain-to-Source Voltage (V)
300
250
ID, Drain Current (A)
Limited By Package
70
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
ID
TOP
27A
50A
BOTTOM 165A
Energy (μJ)
1.5
1.0
0.5
0.0
-10
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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