DDR DRAM Module, 64MX8, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
Maker | Microsemi |
Parts packaging code | MODULE |
package instruction | DIMM, |
Contacts | 200 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | DUAL BANK PAGE BURST |
Maximum access time | 0.7 ns |
Other features | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
JESD-30 code | R-XDMA-N240 |
length | 67.56 mm |
memory density | 536870912 bit |
Memory IC Type | DDR DRAM MODULE |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 200 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 64MX8 |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum seat height | 35.05 mm |
self refresh | YES |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 6.35 mm |
W3EG7264S335AD4 | W3EG7264S262BD4 | W3EG7264S202AD4 | W3EG7264S265BD4 | W3EG7264S202BD4 | W3EG7264S262AD4 | W3EG7264S265AD4 | W3EG7264S335BD4 | |
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Description | DDR DRAM Module, 64MX8, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | DDR DRAM Module, 64MX8, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
Parts packaging code | MODULE | MODULE | MODULE | MODULE | SODIMM | SODIMM | MODULE | MODULE |
package instruction | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
Contacts | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
Maximum access time | 0.7 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.7 ns |
Other features | AUTO/SELF REFRESH; LG-MAX; WD-MAX | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX | AUTO/SELF REFRESH; LG-MAX; WD-MAX | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX | AUTO/SELF REFRESH; LG-MAX; WD-MAX | AUTO/SELF REFRESH; LG-MAX; WD-MAX | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX |
JESD-30 code | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-XDMA-N240 | R-PBGA-B136 | R-PBGA-B136 | R-XDMA-N240 | R-XDMA-N240 |
length | 67.56 mm | 67.56 mm | 67.56 mm | 67.56 mm | 67.56 mm | 67.56 mm | 67.56 mm | 67.56 mm |
memory density | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit |
Memory IC Type | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
word count | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words |
character code | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 64MX8 | 64MX8 | 64MX8 | 64MX8 | 64MX8 | 64MX8 | 64MX8 | 64MX8 |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 35.05 mm | 31.75 mm | 35.05 mm | 31.75 mm | 31.75 mm | 35.05 mm | 35.05 mm | 31.75 mm |
self refresh | YES | YES | YES | YES | YES | YES | YES | YES |
Maximum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
surface mount | NO | NO | NO | NO | YES | YES | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | DUAL | DUAL | DUAL | DUAL | BOTTOM | BOTTOM | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 6.35 mm | 6.35 mm | 6.35 mm | 6.35 mm | 6.35 mm | 6.35 mm | 6.35 mm | 6.35 mm |
Maker | Microsemi | - | - | - | Microsemi | Microsemi | Microsemi | Microsemi |