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“Standard”:
2.
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DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
•
Surge Absorber (C - B) built in.
•
Easy mount by 0.1 inch of terminal interval.
•
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
10
1.4
0.6 ±0.1
2.54
1.4
0.5 ±0.1
µ
PA1458H
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
3
2
1
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Collector Current
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
E
CEO(sus)
I
C(DC)
I
CBS(DC)
I
B(DC)
P
T1
**
P
T2
***
T
j
60
±10
60
±10
7
25
±5
5
0.5
3.5
28
150
V
V
V
mJ/unit
A/unit
A/unit
mA/unit
A/unit
W
W
˚C
(B)
(C)
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
R
1
R
2
.
R
1
= 3.0 kΩ
.
.
R
2
= 300
Ω
.
I
C(pulse)
*
±10
(E)
T
stg
–55 to +150 ˚C
*
PW
≤
300
µ
s, Duty Cycle
≤
10 %
**
4 Circuits, T
a
= 25 ˚C
***
4 Circuits, T
c
= 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
©
10 MIN.
2.5
1994
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EEWORLD
