H5TC4G43MFR-H9A datasheet, PDF

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H5TC4G43MFR-H9A: Description4Gb DDR3L SDRAM; Categorystorage storage; File Size429KB，34 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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H5TC4G43MFR-H9A Overview

4Gb DDR3L SDRAM

H5TC4G43MFR-H9A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA78,9X13,32
Contacts	78
Reach Compliance Code	compli
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	667 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B78
JESD-609 code	e1
length	11 mm
memory density	4294967296 bi
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	78
word count	1073741824 words
character code	1000000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	1GX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA78,9X13,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.35 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.02 A
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	1.45 V
Minimum supply voltage (Vsup)	1.283 V
Nominal supply voltage (Vsup)	1.35 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	9.4 mm

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4Gb DDR3L SDRAM

Lead-Free&Halogen-Free

(RoHS Compliant)

H5TC4G43MFR-xxA

H5TC4G83MFR-xxA

H5TC4G63MFR-xxA

* SK hyix Semiconductor reserves the right to change products or specifications without

Rev. 1.0 / Nov. 2012

H5TC4G43MFR-H9A Related Products

	H5TC4G43MFR-H9A	H5TC4G43MFR	H5TC4G43MFR-G7A	H5TC4G43MFR-PBA	H5TC4G63MFR-G7A	H5TC4G63MFR-H9A	H5TC4G63MFR-PBA	H5TC4G83MFR-G7A	H5TC4G83MFR-H9A	H5TC4G83MFR-PBA
Description	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM	4Gb DDR3L SDRAM
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA78,9X13,32	-	TFBGA, BGA78,9X13,32	TFBGA, BGA78,9X13,32	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA, BGA96,9X16,32	TFBGA, BGA78,9X13,32	TFBGA, BGA78,9X13,32	TFBGA, BGA78,9X13,32
Contacts	78	-	78	78	96	96	96	78	78	78
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	-	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	667 MHz	-	533 MHz	800 MHz	533 MHz	667 MHz	800 MHz	533 MHz	667 MHz	800 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	-	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B78	-	R-PBGA-B78	R-PBGA-B78	R-PBGA-B96	R-PBGA-B96	R-PBGA-B96	R-PBGA-B78	R-PBGA-B78	R-PBGA-B78
JESD-609 code	e1	-	e1	e1	e1	e1	e1	e1	e1	e1
length	11 mm	-	11 mm	11 mm	13 mm	13 mm	13 mm	11 mm	11 mm	11 mm
memory density	4294967296 bi	-	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	-	4	4	16	16	16	8	8	8
Number of functions	1	-	1	1	1	1	1	1	1	1
Number of ports	1	-	1	1	1	1	1	1	1	1
Number of terminals	78	-	78	78	96	96	96	78	78	78
word count	1073741824 words	-	1073741824 words	1073741824 words	268435456 words	268435456 words	268435456 words	536870912 words	536870912 words	536870912 words
character code	1000000000	-	1000000000	1000000000	256000000	256000000	256000000	512000000	512000000	512000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
organize	1GX4	-	1GX4	1GX4	256MX16	256MX16	256MX16	512MX8	512MX8	512MX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA78,9X13,32	-	BGA78,9X13,32	BGA78,9X13,32	BGA96,9X16,32	BGA96,9X16,32	BGA96,9X16,32	BGA78,9X13,32	BGA78,9X13,32	BGA78,9X13,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	-	260	260	260	260	260	260	260	260
power supply	1.35 V	-	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	-	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	4,8	-	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
Maximum standby current	0.02 A	-	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Maximum slew rate	0.16 mA	-	0.14 mA	0.165 mA	-	-	-	0.145 mA	0.165 mA	0.17 mA
Maximum supply voltage (Vsup)	1.45 V	-	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V
Minimum supply voltage (Vsup)	1.283 V	-	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V
Nominal supply voltage (Vsup)	1.35 V	-	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V
surface mount	YES	-	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	-	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	-	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	-	20	20	20	20	20	20	20	20
width	9.4 mm	-	9.4 mm	9.4 mm	9.4 mm	9.4 mm	9.4 mm	9.4 mm	9.4 mm	9.4 mm

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