PMBFJ109-T datasheet, PDF - EEWORLD Datasheet

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PMBFJ109-T: DescriptionTRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; ManufacturerNXP; Websitehttps://www.nxp.com

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PMBFJ109-T Overview

TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

PMBFJ109-T Parametric

Parameter Name	Attribute value
Maker	NXP
Objectid	1440925224
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	11039599
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain-source on-resistance	12 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	15 pF
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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PMBFJ108; PMBFJ109;

PMBFJ110

N-channel junction FETs

Rev. 4 — 20 September 2011

Product data sheet

1. Product profile

1.1 General description

Symmetrical N-channel junction FETs in a SOT23 package.

1.2 Features and benefits



High-speed switching



Interchangeability of drain and source connections



Low R

DSon

at zero gate voltage (8



for PMBFJ108).

1.3 Applications



Analog switches



Choppers and commutators



Audio amplifiers.

2. Pinning information

Table 1.

Pinning

Description

[1]

drain

source

gate

sym053

Simplified outline

Symbol

[1]

Drain and source are interchangeable.

PMBFJ109-T Related Products

	PMBFJ109-T	PMBFJ108,215	PMBFJ109,215	PMBFJ110,215	PMBFJ110T/R	PMBFJ108T/R	PMBFJ108-T	PMBFJ110-T	PMBFJ109T/R
Description	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	SOT-23	TO-236	TO-236	TO-236	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Maximum drain-source on-resistance	12 Ω	8 Ω	12 Ω	18 Ω	18 Ω	8 Ω	8 Ω	18 Ω	12 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	-	-	conform to
JESD-609 code	-	e3	e3	e3	e3	e3	-	-	e3
Peak Reflow Temperature (Celsius)	-	260	260	260	260	260	-	-	260
Maximum power dissipation(Abs)	-	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	-	-	0.25 W
Terminal surface	-	Tin (Sn)	TIN	Tin (Sn)	TIN	TIN	-	-	TIN
Maximum time at peak reflow temperature	-	40	NOT SPECIFIED	40	40	40	-	-	40

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