PMZB350UPE
1 August 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
•
Low threshold voltage
•
Very fast switching
•
Trench MOSFET technology
•
1.8 kV ESD protected
1.3 Applications
•
Relay driver
•
High-speed line driver
•
High-side loadswitch
•
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -0.3 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
-20
8
-1.4
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
330
450
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
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NXP Semiconductors
PMZB350UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
Simplified outline
1
3
2
Transparent
top view
G
Graphic symbol
D
DFN1006B-3 (SOT883B)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Package
Name
PMZB350UPE
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands; body 1.0 x
0.6 x 0.37 mm
Version
SOT883B
Type number
4. Marking
Table 4.
Marking codes
Marking code
0100 1100
PIN 1 INDICATION
READING DIRECTION
Type number
PMZB350UPE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB350UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
1 August 2012
2 / 14
NXP Semiconductors
PMZB350UPE
20 V, single P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-
-55
-55
-65
Max
-20
8
-1.4
-1
-0.7
-2.8
360
715
3125
150
150
150
Unit
V
V
A
A
A
A
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-0.8
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
[3]
-
1800
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Measured between all pins.
2
PMZB350UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
1 August 2012
3 / 14
NXP Semiconductors
PMZB350UPE
20 V, single P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 2.
Normalized total power dissipation as a
function of junction temperature
Fig. 3.
Normalized continuous drain current as a
function of junction temperature
-10
I
D
(A)
-1
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
Limit R
DSon
= V
DS
/I
D
017aaa715
-10
-1
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
-10
-2
0
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
304
150
90
Max
350
175
103
Unit
K/W
K/W
K/W
PMZB350UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
1 August 2012
4 / 14
NXP Semiconductors
PMZB350UPE
20 V, single P-channel Trench MOSFET
Symbol
R
th(j-sp)
Parameter
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
Min
-
Typ
35
Max
40
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm , t ≤ 5 s.
017aaa109
2
2
10
3
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.2
0.05
0.02
0.01
10
2
0.25
0.1
0
10
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
017aaa110
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.75
0.5
0.25
0.1
0.05
0.02
0.01
10
- 2
10
- 1
2
0.33
0.2
0
10
10
- 3
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
Fig. 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB350UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
1 August 2012
5 / 14
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