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2SA1208S-AE

Description
TRANSISTOR,BJT,PNP,160V V(BR)CEO,70MA I(C),TO-92VAR
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SA1208S-AE Overview

TRANSISTOR,BJT,PNP,160V V(BR)CEO,70MA I(C),TO-92VAR

2SA1208S-AE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Factory Lead Time1 week
Maximum collector current (IC)0.07 A
ConfigurationSingle
Minimum DC current gain (hFE)140
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.9 W
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches1
Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching
Audio 80W Output Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of h
FE
and small C
ob
.
· Fast swtching speed.
Package Dimensions
unit:mm
2006B
[2SA1208/2SC2910]
6.0
5.0
4.7
0.5
0.6
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SA1208
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)180
(–)160
(–)5
(–)70
(–)140
900
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)30mA, IB=(–)3mA
100*
150
(2.5)2.0
0.08
(–0.14)
0.3
(–0.4)
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
MHz
pF
V
Unit
µA
µA
* : The 2SA1208/2SC2910 are classified by 10mA h
FE
are follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4

2SA1208S-AE Related Products

2SA1208S-AE 2SC2910S-AE
Description TRANSISTOR,BJT,PNP,160V V(BR)CEO,70MA I(C),TO-92VAR TRANSISTOR,BJT,NPN,160V V(BR)CEO,70MA I(C),TO-92VAR
Is it Rohs certified? conform to conform to
Reach Compliance Code compli compli
Factory Lead Time 1 week 1 week
Maximum collector current (IC) 0.07 A 0.07 A
Configuration Single Single
Minimum DC current gain (hFE) 140 140
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 0.9 W 0.9 W
surface mount NO NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches 1 1

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