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K9F2808U0C-DIB0

Description
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Categorystorage    storage   
File Size576KB,33 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K9F2808U0C-DIB0 Overview

16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

K9F2808U0C-DIB0 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instruction9 X 11 MM, 0.80 MM PITCH, TBGA-63
Contacts63
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time30 ns
Other featuresCONTAINS ADDITIONAL 4M BIT NAND FLASH
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
length11 mm
memory density134217728 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1K
Number of terminals63
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size512 words
Parallel/SerialSERIAL
power supply3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1 mm
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
switch bitNO
typeSLC NAND TYPE
width9 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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