16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Parameter Name | Attribute value |
Maker | SAMSUNG |
Parts packaging code | BGA |
package instruction | 9 X 11 MM, 0.80 MM PITCH, TBGA-63 |
Contacts | 63 |
Reach Compliance Code | compli |
ECCN code | 3A991.B.1.A |
Maximum access time | 30 ns |
Other features | CONTAINS ADDITIONAL 4M BIT NAND FLASH |
command user interface | YES |
Data polling | NO |
JESD-30 code | R-PBGA-B63 |
length | 11 mm |
memory density | 134217728 bi |
Memory IC Type | FLASH |
memory width | 8 |
Number of functions | 1 |
Number of departments/size | 1K |
Number of terminals | 63 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 16MX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA63,10X12,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
page size | 512 words |
Parallel/Serial | SERIAL |
power supply | 3.3 V |
Programming voltage | 2.7 V |
Certification status | Not Qualified |
ready/busy | YES |
Maximum seat height | 1 mm |
Department size | 16K |
Maximum standby current | 0.00005 A |
Maximum slew rate | 0.02 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 2.7 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
switch bit | NO |
type | SLC NAND TYPE |
width | 9 mm |