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UT6716485-PCC

Description
Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28
Categorystorage    storage   
File Size127KB,15 Pages
ManufacturerCobham PLC
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UT6716485-PCC Overview

Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28

UT6716485-PCC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCobham PLC
Objectid8175860838
package instructionDIP, DIP28,.6
Reach Compliance Codeunknown
compound_id224629178
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T28
JESD-609 codee0
length35.56 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Maximum seat height4.445 mm
Minimum standby current2.5 V
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
total dose1M Rad(Si) V
width15.24 mm

UT6716485-PCC Related Products

UT6716485-PCC UT6716485PCA UT6716485PCX UT6716485-PCX UT6716485PCC
Description Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28 IC,SRAM,8KX8,CMOS, RAD HARD,DIP,28PIN,CERAMIC UT6716485PCX Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28 IC,SRAM,8KX8,CMOS, RAD HARD,DIP,28PIN,CERAMIC
package instruction DIP, DIP28,.6 DIP, DIP28,.6 , DIP, DIP, DIP28,.6
Reach Compliance Code unknown unknown unknown unknown unknown
Is it Rohs certified? incompatible incompatible - - incompatible
Maker Cobham PLC - Cobham PLC Cobham PLC Cobham PLC
Maximum access time 85 ns 85 ns - 85 ns 85 ns
I/O type COMMON COMMON - - COMMON
JESD-30 code R-CDIP-T28 R-XDIP-T28 - R-CDIP-T28 R-XDIP-T28
JESD-609 code e0 e0 - - e0
memory density 65536 bit 65536 bit - 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM - STANDARD SRAM STANDARD SRAM
memory width 8 8 - 8 8
Number of terminals 28 28 - 28 28
word count 8192 words 8192 words - 8192 words 8192 words
character code 8000 8000 - 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C - 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C
organize 8KX8 8KX8 - 8KX8 8KX8
Output characteristics 3-STATE 3-STATE - - 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC - CERAMIC, METAL-SEALED COFIRED CERAMIC
encapsulated code DIP DIP - DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 - - DIP28,.6
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE - IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL - PARALLEL PARALLEL
power supply 5 V 5 V - - 5 V
Minimum standby current 2.5 V 2.5 V - - 2.5 V
Maximum slew rate 0.04 mA 0.04 mA - - 0.04 mA
Nominal supply voltage (Vsup) 5 V 5 V - 5 V 5 V
surface mount NO NO - NO NO
technology CMOS CMOS - CMOS CMOS
Temperature level MILITARY MILITARY - MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm - 2.54 mm 2.54 mm
Terminal location DUAL DUAL - DUAL DUAL
total dose 1M Rad(Si) V 1M Rad(Si) V - 1M Rad(Si) V 1M Rad(Si) V
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