IC,SRAM,8KX8,CMOS, RAD HARD,DIP,28PIN,CERAMIC
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | DIP, DIP28,.6 |
Reach Compliance Code | unknown |
Maximum access time | 85 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T28 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Minimum standby current | 2.5 V |
Maximum slew rate | 0.04 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
total dose | 1M Rad(Si) V |
Base Number Matches | 1 |
UT6716485PCA | UT6716485PCX | UT6716485-PCX | UT6716485PCC | UT6716485-PCC | |
---|---|---|---|---|---|
Description | IC,SRAM,8KX8,CMOS, RAD HARD,DIP,28PIN,CERAMIC | UT6716485PCX | Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28 | IC,SRAM,8KX8,CMOS, RAD HARD,DIP,28PIN,CERAMIC | Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, DIP-28 |
package instruction | DIP, DIP28,.6 | , | DIP, | DIP, DIP28,.6 | DIP, DIP28,.6 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
Is it Rohs certified? | incompatible | - | - | incompatible | incompatible |
Maximum access time | 85 ns | - | 85 ns | 85 ns | 85 ns |
I/O type | COMMON | - | - | COMMON | COMMON |
JESD-30 code | R-XDIP-T28 | - | R-CDIP-T28 | R-XDIP-T28 | R-CDIP-T28 |
JESD-609 code | e0 | - | - | e0 | e0 |
memory density | 65536 bit | - | 65536 bit | 65536 bit | 65536 bit |
Memory IC Type | STANDARD SRAM | - | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
memory width | 8 | - | 8 | 8 | 8 |
Number of terminals | 28 | - | 28 | 28 | 28 |
word count | 8192 words | - | 8192 words | 8192 words | 8192 words |
character code | 8000 | - | 8000 | 8000 | 8000 |
Operating mode | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 125 °C | - | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -55 °C | - | -55 °C | -55 °C | -55 °C |
organize | 8KX8 | - | 8KX8 | 8KX8 | 8KX8 |
Output characteristics | 3-STATE | - | - | 3-STATE | 3-STATE |
Package body material | CERAMIC | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP | - | DIP | DIP | DIP |
Encapsulate equivalent code | DIP28,.6 | - | - | DIP28,.6 | DIP28,.6 |
Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | - | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | - | - | 5 V | 5 V |
Minimum standby current | 2.5 V | - | - | 2.5 V | 2.5 V |
Maximum slew rate | 0.04 mA | - | - | 0.04 mA | 0.04 mA |
Nominal supply voltage (Vsup) | 5 V | - | 5 V | 5 V | 5 V |
surface mount | NO | - | NO | NO | NO |
technology | CMOS | - | CMOS | CMOS | CMOS |
Temperature level | MILITARY | - | MILITARY | MILITARY | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | - | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | - | DUAL | DUAL | DUAL |
total dose | 1M Rad(Si) V | - | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
Maker | - | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC |