2N2316 datasheet, PDF - EEWORLD Datasheet

2N2316: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, TO-46, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size329KB，4 Pages; ManufacturerSemitronics Corp.

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2N2316 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, TO-46, 3 PIN

Parameter Name	Attribute value
Parts packaging code	TO-46
package instruction	TO-46, 3 PIN
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-46
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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