IRFR024NPBF datasheet, PDF - EEWORLD Datasheet

IRFR024NPBF: Description17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size4MB，10 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	55 V
Processing package description	DPAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin OVER Nickel
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	17 A
Rated avalanche energy	71 mJ
Maximum drain on-resistance	0.0750 ohm
Maximum leakage current pulse	68 A

IRFR024NPbF

IRFU024NPbF

PD - 95066A

•

Lead-Free

www.kersemi.com

1

12/14/04

	IRFR024NPBF	IRFR024NTRL
Description	17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals	2	2
Minimum breakdown voltage	55 V	55 V
Processing package description	DPAK-3	DPAK-3
state	ACTIVE	DISCONTINUED
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE Tin OVER Nickel	tin lead
Terminal location	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply
Maximum leakage current	17 A	17 A
Rated avalanche energy	71 mJ	71 mJ
Maximum drain on-resistance	0.0750 ohm	0.0750 ohm
Maximum leakage current pulse	68 A	68 A

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