IPD031N03L-G datasheet, PDF - EEWORLD Datasheet

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IPD031N03L-G: DescriptionOpiMOS 3 Power-Transistor; File Size412KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IPD031N03L-G Overview

OpiMOS 3 Power-Transistor

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Type

IPD031N03L G

IPS031N03L G

OptiMOS

3 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

for target applications

• N-channel, logic level

• Excellent gate charge x

DS(on)

product (FOM)

• Very low on-resistance

DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

IPD031N03L G

Type

• Pb-free plating; RoHS compliant

IPS031N03L G

Product Summary

DS(on),max

3.1

mΩ

Package

Marking

PG-TO252-3-11

031N03L

PG-TO251-3-11

031N03L

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=4.5 V,

=25 °C

=4.5 V,

=100 °C

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Value

400

±20

Unit

D,pulse

dv /dt

=25 °C

=90 A,

=25

Ω

=90 A,

=24 V,

di /dt =200 A/µs,

j,max

=175 °C

kV/µs

J-STD20 and JESD22

Rev. 1.03

page 1

2008-04-15

IPD031N03L-G Related Products

	IPD031N03L-G	IPD031N03M-G
Description	OpiMOS 3 Power-Transistor	OpiMOS 3 Power-Transistor

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