ZTX551STOB datasheet, PDF - EEWORLD Datasheet

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ZTX551STOB: Description1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size126KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX551STOB Overview

1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX551STOB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3
Reach Compliance Code	unknown

ZTX551STOB Preview

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX550

ZTX551

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

-60

-45

-5

-2

-1

E-Line

TO92 Compatible

ZTX550 ZTX551

-80

-60

UNIT

V

A

W

mW/ °C

°C

1

5.7

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

100

15

150

ZTX550

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-60

-45

-5

-0.1

-0.25

-1.1

300

50

10

150

MAX. MIN.

-80

-60

-5

ZTX551

MAX.

UNIT

V

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-45V

V

CB

=-60V

V

EB

=-4V

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

-0.1

-0.35

-1.1

150

µ

A

µ

A

µ

A

V

MHz

I

C

=-50mA, V

CE

=-10V

f=100MHz

3-194

ZTX550

ZTX551

TYPICAL CHARACTERISTICS

100

h

FE

- Normalised Gain (%)

-0.8

80

60

ZTX551

V

CE(sat)

- (Volts)

-0.6

ZTX550

-0.4

I

C

/I

B

=10

-0.2

ZTX551

40

20

0

-0.01

-0.1

-1

-10

-0.001

-0.01

-0.1

-1

-10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

h

FE

v I

C

-1.4

-1.0

V

BE

- (Volts)

V

BE(sat)

- (Volts)

-1.2

-0.9

-1.0

-0.8

-0.7

-0.6

-0.01

-0.1

-0.6

-1

-10

-0.01

-0.1

-1

-10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

10

Single Pulse Test at T

amb

=25°C

V

BE(sat)

v I

C

I

C

- Collector Current (Amps)

1

ZTX550

D.C.

1s

100ms

10ms

1.0ms

0.3ms

0.1ms

0.1

0.01

0.1

1

10

100

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

ZTX551

3-195

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ZTX551STOB Related Products

	ZTX551STOB	ZTX551STZ	ZTX551	ZTX550	ZTX550STZ
Description	1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Factory Lead Time	-	15 weeks	15 weeks	15 weeks	15 weeks
Maximum collector current (IC)	-	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	-	60 V	60 V	45 V	45 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	10	10	15	15
JESD-30 code	-	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	-	e3	e3	e3	e3
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	-	260	260	260	260
Polarity/channel type	-	PNP	PNP	PNP	PNP
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	NO	NO
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	-	WIRE	WIRE	WIRE	WIRE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	40	40	40	40
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	150 MHz	150 MHz	150 MHz	150 MHz

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