ZTX550STZ datasheet, PDF - EEWORLD Datasheet

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ZTX550STZ: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size126KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX550STZ Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX550STZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

ZTX550STZ Preview

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX550

ZTX551

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

-60

-45

-5

-2

-1

E-Line

TO92 Compatible

ZTX550 ZTX551

-80

-60

UNIT

V

A

W

mW/ °C

°C

1

5.7

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

100

15

150

ZTX550

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-60

-45

-5

-0.1

-0.25

-1.1

300

50

10

150

MAX. MIN.

-80

-60

-5

ZTX551

MAX.

UNIT

V

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-45V

V

CB

=-60V

V

EB

=-4V

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

-0.1

-0.35

-1.1

150

µ

A

µ

A

µ

A

V

MHz

I

C

=-50mA, V

CE

=-10V

f=100MHz

3-194

ZTX550

ZTX551

TYPICAL CHARACTERISTICS

100

h

FE

- Normalised Gain (%)

-0.8

80

60

ZTX551

V

CE(sat)

- (Volts)

-0.6

ZTX550

-0.4

I

C

/I

B

=10

-0.2

ZTX551

40

20

0

-0.01

-0.1

-1

-10

-0.001

-0.01

-0.1

-1

-10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

h

FE

v I

C

-1.4

-1.0

V

BE

- (Volts)

V

BE(sat)

- (Volts)

-1.2

-0.9

-1.0

-0.8

-0.7

-0.6

-0.01

-0.1

-0.6

-1

-10

-0.01

-0.1

-1

-10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

10

Single Pulse Test at T

amb

=25°C

V

BE(sat)

v I

C

I

C

- Collector Current (Amps)

1

ZTX550

D.C.

1s

100ms

10ms

1.0ms

0.3ms

0.1ms

0.1

0.01

0.1

1

10

100

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

ZTX551

3-195

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ZTX550STZ Related Products

	ZTX550STZ	ZTX551STZ	ZTX551	ZTX550	ZTX551STOB
Description	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, E-LINE PACKAGE-3	1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	unknown
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
Factory Lead Time	15 weeks	15 weeks	15 weeks	15 weeks	-
Maximum collector current (IC)	1 A	1 A	1 A	1 A	-
Collector-emitter maximum voltage	45 V	60 V	60 V	45 V	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	15	10	10	15	-
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	-
JESD-609 code	e3	e3	e3	e3	-
Number of components	1	1	1	1	-
Number of terminals	3	3	3	3	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	-
Peak Reflow Temperature (Celsius)	260	260	260	260	-
Polarity/channel type	PNP	PNP	PNP	PNP	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	-
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	-
Terminal form	WIRE	WIRE	WIRE	WIRE	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	40	40	40	40	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	-

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