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ST1000A150CS

Description
Trans Voltage Suppressor Diode, 1000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, MINISTUD-1
CategoryDiscrete semiconductor    diode   
File Size109KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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ST1000A150CS Overview

Trans Voltage Suppressor Diode, 1000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, MINISTUD-1

ST1000A150CS Parametric

Parameter NameAttribute value
MakerSSDI
package instructionO-MUPM-X1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage165 V
Minimum breakdown voltage135 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MUPM-X1
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals1
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
GuidelineMIL-19500
Maximum repetitive peak reverse voltage130 V
surface mountNO
technologyAVALANCHE
Terminal formUNSPECIFIED
Terminal locationUPPER
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com
*
www.ssdi-power.com
ST1000 Series
DESIGNER’S DATA SHEET
FEATURES:
Hermetically Sealed in Glass
High Peak Transient Power 1000 W
Can Be Used as a 5 W Zener
Available in Axial, Surface Mount, and Ministud
Configurations
TX, TXV, and Space Level Screening Available
2/
Higher Voltages Available (consult factory)
1000 W
Transient Voltage Suppressor
7.5 – 510 VOLTS
Axial
Part Number / Ordering Information
1/
ST1000 A 9.1 SMS TX
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
3/
Package:
__
= Axial
SMS = Square Tab
V = Isolated Ministud
C = Ministud
Voltage: example
9.1 = 9.1V
Tolerance
A =
10%
B=
5%
DIM
A
B
C
D
MIN
––
––
0.047”
1.0”
MAX
0.158”
0.185”
0.053”
––
SMS
Maximum Ratings
Peak pulse power dissipation
100 µs Square Wave (see Fig 2)
Symb l
P
PPM
P
PPM
P
D
T
op
& T
stg
V
F
R
θJL
R
θJE
R
θJC
Value
1000
500
6.0
-65 to
+175
1.3
25
8
Unit
W
W
W
ºC
V
ºC/W
ºC/W
Ministud
DIM
A
B
C
D
MIN
0.170"
0.200”
0.018”
0.001”
MAX
0.180”
0.225”
0.027”
––
Peak pulse power dissipation
5/
10/1000 µs waveform (see Fig 1 & 2)
Isolated Ministud
Steady State Power Dissipation
Axial Lead : T
L
=25ºC, L=3/8"
SMS & Ministud: T
C
or T
E
= 75 ºC
Operating and Storage Temp.
Maximum Forward Voltage Drop
I
F
= 6.0 Apk, T
A
= 25 ºC, pulsed
Thermal Resistance,
Junction to Lead L=3/8”
Thermal Resistance,
Junction to End Cap
Junction to Case
NOTES:
1/ For ordering information, price, and availability – contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request. X-Ray shall be performed in lieu of Precap Inspection – Consult factory.
3/ Consult factory for package outlines.
4/ All voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test time will have a corresponding effect on the
measured value due to heating effects.
5/ Exponential waveform i.a.w. IEC60-1 10/1000 uS pulse
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00033D
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