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CHEMG8GP

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size138KB,3 Pages
ManufacturerCHENMKO
Websitehttp://www.chenmko.com/
Download Datasheet Parametric View All

CHEMG8GP Overview

Transistor,

CHEMG8GP Parametric

Parameter NameAttribute value
MakerCHENMKO
package instruction,
Reach Compliance Codeunknown
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHEMG8GP
CURRENT 70 mAmpere
FEATURE
* Small surface mounting type. (SOT-553)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* two CHDTC143Z chips in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
(4)
(3)
SOT553
0.50
0.9~1.1
(5)
(1)
0.50
1.5~1.7
0.15~0.3
MARKING
* G8
0.5~0.6
1.1~1.3
0.19~0.18
1.5~1.7
CIRCUIT
3
R1
R2
2
R1
R2
1
4
5
Dimensions in millimeters
SOT553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
TOT
T
STG
T
J
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
junction - soldering point
T
amb
25
O
C, Note 1
PARAMETER
Supply voltage
Input voltage
CONDITIONS
-5
−55
MIN.
MAX.
50
+30
100
mA
100
150
+150
150
140
mW
O
UNIT
V
V
C
C
C/W
2004-07
O
O
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