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SPB30N03

Description
Power Field-Effect Transistor, 30A I(D), 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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SPB30N03 Overview

Power Field-Effect Transistor, 30A I(D), 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SPB30N03 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
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