EDI88128CS35TB datasheet, PDF - EEWORLD Datasheet

EDI88128CS35TB: DescriptionStandard SRAM, 128KX8, 35ns, CMOS, CDIP32,; Categorystorage storage; File Size149KB，10 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI88128CS35TB Overview

Standard SRAM, 128KX8, 35ns, CMOS, CDIP32,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.2 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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