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SG-636SCWFREQC

Description
CRYSTAL OSCILLATOR, CLOCK, 41 MHz - 135 MHz, CMOS OUTPUT, MINI, SO-4
CategoryPassive components    oscillator   
File Size43KB,4 Pages
ManufacturerSeiko Epson Corporation
Environmental Compliance
Download Datasheet Parametric View All

SG-636SCWFREQC Overview

CRYSTAL OSCILLATOR, CLOCK, 41 MHz - 135 MHz, CMOS OUTPUT, MINI, SO-4

SG-636SCWFREQC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerSeiko Epson Corporation
Reach Compliance Codeunknown
maximum descent time4 ns
Frequency Adjustment - MechanicalNO
frequency stability100%
Installation featuresSURFACE MOUNT
Maximum operating frequency135 MHz
Minimum operating frequency41 MHz
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Oscillator typeCMOS
Output load15 pF
physical size10.5mm x 5mm x 2.7mm
longest rise time4 ns
Nominal supply voltage3.3 V
surface mountYES
maximum symmetry60/40 %
Crystal oscillator
SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636 series
Products number
Q33 6 3 6 x x x x x x x 0 0
• A small SMD that enables high-density mounting.
• A general-purpose device with builtin heat-resisting cylindrical AT-cut
crystal and allowing almost the same temperature condition for soldering
as SMD IC.
• Low current consumption by output enable function(OE) or standby
function(ST).
Actual size
Specifications (characteristics)
Item
Output frequency range
Symbol
f
0
SG-636PTF
2.21675 MHz to
41.0000 MHz
-0.5 V to +7.0 V
SG-636PH
SG-636SCE/PCE
SG-636PDE
Specifications
41.0001
MHz
to
2.21675 MHz to 41.0000 MHz
70.0000
MHz
-0.5 V to +7.0 V
3.3 V ±0.3 V
-55 °C to +100 °C
-20 °C to +70 °C
C: ±100 x 10
-6
2.5 V ±0.25 V
Remarks
Power source
Max. supply voltage V
DD
-GND
voltage
Operating voltage
V
DD
Temperature
Storage temperature
T
STG
range
Operating temperature
T
OPR
Frequency stability
∆f/f
0
Current consumption
lop
Output disable current
I
OE
Duty
C-MOS level
TTL level
t
w
/
t
V
OL
V
OL
C
L
N
V
IH
V
IL
t
TLH
t
THL
tosc
fa
S.R.
5.0 V ±0.5 V
Stored as bare product after unpacking
17 mA Max.
10 mA Max.
45 % to 55 %
35 mA Max.
20 mA Max.
9 mA Max.
5 mA Max.
5 mA Max.
3 mA Max.
40 % to 60 %
V
DD
-0.4 V Min.
0.4 V Max.
50 pF Max.
10 TTL Max.
20 pF Max.(
55 MHz)
15 pF Max.( > 55 MHz)
45 % to 55 %
Output Joltage V
OH
Output load condition
C-MOS
(fan out)
TTL
No load condition
OE=GND, ST=GND 2 µA Max.(SCE)
C-MOS load: 1/2 V
DD
leve l
TTL load: 1.4 V level
I
OH
=-8 mA (PTF) /-4 mA (PH / SCE PCE / PDE)
I
OL
=16 mA (PTF) /4 mA (PH / SCE PCE / PDE)
30 pF Max.
15 pF Max.
C
L
<
15 pF
_
5 LSTTL Max.
Output enable/disable input voltage
Output rise time
Output fall time
C-MOS level
TTL level
C-MOS level
TTL level
2.0 V Min.
0.8 V Max.
7 ns Max.
5 ns Max.
7 ns Max.
5 ns Max.
4 ms Max.
5 ns Max.
5 ns Max.
0.8 V
DD
Min.
0.2 V
DD
Max.
OE,ST
C-MOS load: 20 %→80 % V
DD
TTL load: 0.4 V→2.4 V
C-MOS load: 80 %→20 % V
DD
TTL load: 2.4 V→0.4 V
Oscillation start up time
Aging
Shock resistance
10 ms Max.
±5 x 10
-6
/year Max.
4 ms Max.
Time at minimum operating voltage to be O s
Ta=+25 °C,V
DD
=5
V
,first year
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s
2
x 0.3 ms x 1/2 sine wave in 3 directions
±20 x 10
-6
Max.
Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is required.
Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec.
External dimensions
10.5 Max.
#4
#3
(Unit: mm)
Recommended soldering pattern
1.3
3.8
1.3
(Unit: mm)
NO.
5.8 Max.
5.0
Pin terminal
OE or ST
GND
OUT
V
DD
2.1
(1.0)
2.1
3.6
2.5
E 18.4320C
PTF9352A
#1
#2
1
2
3
4
0.5
5.08
2.7 Max.
0.05
Min.
37
(1.0)
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