2SC2712-O(TE85L,F) datasheet, PDF

2SC2712-O(TE85L,F): Description150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size308KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC2712-O(TE85L,F) Overview

150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Factory Lead Time	16 weeks
Other features	LOW NOISE
Maximum collector current (IC)	0.15 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.15 W
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
VCEsat-Max	0.25 V
Base Number Matches	1

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