IRFY310R1 datasheet, PDF - EEWORLD Datasheet

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IRFY310R1: Description1.2A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRFY310R1 Overview

1.2A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY310R1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-257AB
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	1.2 A
Maximum drain-source on-resistance	4.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IRFY310

Dimensions in mm (inches).

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

16.5 (0.65)

3.70 Dia. Nom

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

DSS

= 400V

= 1.2A

DS(ON)

= 4.15Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

Parameter

DSS

DS(ON)

ISS

td(on)

td(off)

Drain – Source Breakdown Voltage

Continuous Drain Current

Power Dissipation

Static Drain – Source On–State Resistance

Input Capacitance

Total Gate Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Min.

Typ.

Max.

400

1.2

4.15

Units

Ω

170

8.4

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

13-Sep-02

IRFY310R1 Related Products

	IRFY310R1
Description	1.2A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-257AB
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	1.2 A
Maximum drain-source on-resistance	4.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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