T675S30TUL datasheet, PDF - EEWORLD Datasheet

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T675S30TUL: DescriptionSilicon Controlled Rectifier, 2000A I(T)RMS, 1270000mA I(T), 3000V V(DRM), 3000V V(RRM), 1 Element,; CategoryAnalog mixed-signal IC Trigger device; File Size95KB，5 Pages; ManufacturerEUPEC [eupec GmbH]

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T675S30TUL Overview

Silicon Controlled Rectifier, 2000A I(T)RMS, 1270000mA I(T), 3000V V(DRM), 3000V V(RRM), 1 Element,

T675S30TUL Parametric

Parameter Name	Attribute value
Maker	EUPEC [eupec GmbH]
Reach Compliance Code	unknown
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	2.2 V
Maximum holding current	300 mA
JESD-30 code	O-CEDB-X4
Maximum leakage current	150 mA
On-state non-repetitive peak current	18000 A
Number of components	1
Number of terminals	4
Maximum on-state current	1270000 A
Maximum operating temperature	120 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	2000 A
Off-state repetitive peak voltage	3000 V
Repeated peak reverse voltage	3000 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	END
Trigger device type	SCR

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Technische Information / Technical Information

Schneller Thyristor

Fast Thyristor

Elektrische Eigenschften / Electrical properties

Hö

chstzulä ssige Werte / Maximum rated values

Periodische Vorwä rts- und Rückwä rts-Spitzensperrspannung

repetitive peak forward off-state and reverse voltages

Vorwä rts-Stoßspitzensperrspannung

non-repetitive peak foward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

RMSM on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²

t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85 °C

= 31 °C

= 25°C, tp = 10 ms

= T

vj max

, tp = 10 ms

= 25°C, tp = 10ms

= T

vj max

, tp = 10ms

DIN IEC 747-6

f=50 Hz, i

= 1 A

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

5. Kennbuchstabe / 5th letter B

5. Kennbuchstabe / 5th letter C

5. Kennbuchstabe / 5th letter L

5. Kennbuchstabe / 5th letter M

= + 25°C...T

vj max

= - 40°C...T

vj max

= - 40°C...T

vj max

T 675 S 26 ... 30

DRM

, V

RRM

2600

2800

3000

A²

A/µs

DSM

2600

2800

3000

RSM

2700

2900

3100

TRSMSM

TAVM

TSM

I²

(di

/dt)

2000

675

1274

18000

16000

1620x10³

1280x10³

250

(dv

/dt)

500

1000

500

V/µs

mŒ

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündener Steuerstrom

gate non-trigger current

Nicht zündene Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwä rts- und Rückwä rts-Sperrstrom

forward off-state and reverse currents

Zündverzug

gate controlled delay time

= 25°C, v

= 12 V, R

GK>

= 10 Œ

= 1 A, di

/dt = 1 A/µs

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25°C

= 1 A, di

/dt = 1 A/µs

= 25°C, v

= 12 V, R

= 10 Œ

= T

vj max

, v

= 12 V

= T

vj max

= 0,5 V

DRM

= T

vj max

= 0,5 V

DRM

= 25°C, v

= 12V

= 25°C, v

=12 V

= T

vj max

= T

vj max

= T

vj max

, i

= 3500 A

T(TO)

max. 3,75

1,5

0,58

max. 250

max. 2,2

max.

max. 0,25

max.

300

max. 1500

, i

max.

150

2,2

µs

1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung). / Values to DIN IEC 747-6 (without prior commutation).

2) Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für t

./ Immediately after circuit commutated turn-off-time,

see parameters t

SZ-M / 15.05.95, K.-A.Rüther

/ 95

Seite/page 1 (5)

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