STRH100N10FSY01 datasheet, PDF

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STRH100N10FSY01: Description48A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size428KB，17 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STRH100N10FSY01 Overview

48A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3

STRH100N10FSY01 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-XSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	954 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	48 A
Maximum drain current (ID)	48 A
Maximum drain-source on-resistance	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	170 W
Maximum pulsed drain current (IDM)	192 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

STRH100N10FSY01 Related Products

	STRH100N10FSY01	STRH100N10FSY1	STRH100N10FSY02
Description	48A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3	48A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3	48A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics
Parts packaging code	TO-254AA	TO-254AA	TO-254AA
package instruction	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	954 mJ	954 mJ	954 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	48 A	72 A	48 A
Maximum drain current (ID)	48 A	48 A	48 A
Maximum drain-source on-resistance	0.035 Ω	0.035 Ω	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	170 W	170 W	170 W
Maximum pulsed drain current (IDM)	192 A	192 A	192 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-

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