4N39
Photo SCR Optocoupler
FEATURES
• Turn On Current (
I
FT
), 5.0 mA Typical
• Gate Trigger Current (
I
GT
), 20 mA
• Surge Anode Current, 10 Amp
• Blocking Voltage, 200
V
ACPK
• Gate Trigger Voltage (
V
GT
), 0.6 Volt
• Isolation Voltage, 5300
V
RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
•
V
VDE Approval #0884 Available with
Option 1
D E
Dimensions in Inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
NC 3
.300 (7.62)
typ.
4 Cathode
2
1
pin one ID
Anode 1
Cathode 2
6 Gate
5 Anode
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be
used in SCR triac and solid state relay applica-
tions where high blocking voltages and low input
current sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................... 6.0 V
Peak Forward Current
(100
µ
s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
°
C......................... 100 mW
Derate Linearly from 50
°
C ..................... 2.0 mW/
°
C
Detector
Reverse Gate Voltage..................................... 6.0 V
Anode Peak Blocking Voltage ...................... 200 V
Peak Reverse Gate Voltage............................ 6.0 V
Anode Current ............................................ 300 mA
Surge Anode Current (100
µ
s duration) .......... 10 A
Surge Gate Current (5.0 ms duration)........ 100 mA
Power Dissipation, 25
°
C ambient.............. 400 mW
Derate Linearly from 25
°
C ..................... 8.0 mW/
°
C
Package
Isolation Test Voltage (1.0 sec.)............. 5300
V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C..............................
≥
10
11
Ω
Total Package Dissipation ......................... 450 mW
Derate Linearly from 50
°
C ..................... 9.0 mW/
°
C
Operating Temperature ............... –55
°
C to +100
°
C
Storage Temperature................... –55
°
C to +150
°
C
Soldering Temperature (10 s.).......................260
°
C
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Characteristics
T
A
=25
°
C
Parameters
Emitter
Forward Voltage
Reverse Current
Detector
Forward Blocking
Voltage
Reverse Blocking
Voltage
Sym.
Min.
—
—
200
200
—
—
—
Typ.
1.2
—
—
—
—
—
0.6
Max.
1.5
10
—
—
1.2
200
1.0
Unit
V
Condition
V
F
I
R
V
DM
V
RM
V
TM
I
H
V
GT
I
DM
I
F
=20 mA
V
R
=5.0 V
R
GK
=10 k
Ω
T
A
=100
°
C
µ
A
V
V
V
µ
A
V
Id=150
µ
A
On-state Voltage
Holding Current
Gate Trigger
Voltage
Forward Leakage
Current
I
TM
=300 mA
R
GK
=27 k
Ω
V
FX
=50 V
—
—
50
µ
A
Reverse Leakage
Current
I
RM
—
—
50
µ
A
V
FX
=100 V
R
GK
=27 k
Ω
R
L
=10 K
Ω
R
GK
=10 k
Ω
V
RX
=200 V
I
F
=0,
T
A
=100
°
C
R
GK
=27 k
Ω
V
RX
=200 V
I
F
=0,
T
A
=100
°
C
V
FX
=50 V
R
GK
=10 k
Ω
V
FX
=100 V
R
GK
=27 k
Ω
f=1.0 MHz
Package
Turn-0n Current
I
FT
—
—
15
8.0
2.0
30
14
—
mA
—
pF
Isolation
Capacitance
—
—
Document Number: 83603
Revision 17-August-01
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