EDI8C32512CA35EI datasheet, PDF

EDI8C32512CA35EI: DescriptionSRAM Module, 2MX8, 35ns, CMOS, CQMA68,; Categorystorage storage; File Size97KB，6 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8C32512CA35EI Overview

SRAM Module, 2MX8, 35ns, CMOS, CQMA68,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	S-CQMA-G68
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	68
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP
Encapsulate equivalent code	QFP68,.99SQ,50
Package shape	SQUARE
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.06 A
Minimum standby current	4.5 V
Maximum slew rate	0.6 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

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