Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | QFP |
| package instruction | LQFP, QFP100,.63X.87 |
| Contacts | 100 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 4 ns |
| Maximum clock frequency (fCLK) | 117 MHz |
| I/O type | COMMON |
| JESD-30 code | R-PQFP-G100 |
| JESD-609 code | e0 |
| length | 20 mm |
| memory density | 4718592 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 36 |
| Number of functions | 1 |
| Number of terminals | 100 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 128KX36 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | LQFP |
| Encapsulate equivalent code | QFP100,.63X.87 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 2.5/3.3,3.3 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.6 mm |
| Maximum standby current | 0.03 A |
| Minimum standby current | 3.14 V |
| Maximum slew rate | 0.35 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3.135 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.65 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 14 mm |
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