MH1M09ANZ-10H datasheet, PDF - EEWORLD Datasheet

MH1M09ANZ-10H: DescriptionSRAM Module, 1MX9, 100ns, CMOS; Categorystorage storage; File Size256KB，8 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH1M09ANZ-10H Overview

SRAM Module, 1MX9, 100ns, CMOS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
package instruction	ZIP, ZIP70/74,.1,.1
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
Other features	DECODER AVAILABLE
I/O type	COMMON
JESD-30 code	R-XZMA-T70
JESD-609 code	e0
memory density	9437184 bit
Memory IC Type	SRAM MODULE
memory width	9
Number of functions	1
Number of ports	1
Number of terminals	70
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX9
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	ZIP
Encapsulate equivalent code	ZIP70/74,.1,.1
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00018 A
Minimum standby current	2 V
Maximum slew rate	0.254 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	1.27 mm
Terminal location	ZIG-ZAG

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