Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon,
Parameter Name | Attribute value |
Maker | Fuji Electric Co., Ltd. |
package instruction | O-MUPM-D1 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C |
application | FAST RECOVERY |
Shell connection | ANODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V |
JESD-30 code | O-MUPM-D1 |
Maximum non-repetitive peak forward current | 500 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -40 °C |
Maximum output current | 30 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 200 V |
Maximum reverse current | 15000 µA |
Maximum reverse recovery time | 0.3 µs |
surface mount | NO |
Terminal form | SOLDER LUG |
Terminal location | UPPER |
ERE26-02 | ERE76-02 | ERE76-04 | ERE76-01 | ERE26-04 | |
---|---|---|---|---|---|
Description | Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, |
package instruction | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C |
application | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY |
Shell connection | ANODE | CATHODE | CATHODE | CATHODE | ANODE |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
JESD-30 code | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
Maximum non-repetitive peak forward current | 500 A | 500 A | 500 A | 500 A | 500 A |
Number of components | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 1 | 1 | 1 | 1 | 1 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
Maximum output current | 30 A | 30 A | 30 A | 30 A | 30 A |
Package body material | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 200 V | 200 V | 400 V | 100 V | 400 V |
Maximum reverse current | 15000 µA | 15000 µA | 15000 µA | 15000 µA | 15000 µA |
Maximum reverse recovery time | 0.3 µs | 0.3 µs | 0.3 µs | 0.3 µs | 0.3 µs |
surface mount | NO | NO | NO | NO | NO |
Terminal form | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG |
Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER |
Maker | Fuji Electric Co., Ltd. | - | Fuji Electric Co., Ltd. | Fuji Electric Co., Ltd. | Fuji Electric Co., Ltd. |