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ERE76-02

Description
Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size40KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
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ERE76-02 Overview

Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon,

ERE76-02 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current15000 µA
Maximum reverse recovery time0.3 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1

ERE76-02 Related Products

ERE76-02 ERE26-02 ERE76-04 ERE76-01 ERE26-04
Description Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon,
package instruction O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Reach Compliance Code unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection CATHODE ANODE CATHODE CATHODE ANODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 500 A 500 A 500 A 500 A 500 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 30 A 30 A 30 A 30 A 30 A
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 200 V 400 V 100 V 400 V
Maximum reverse current 15000 µA 15000 µA 15000 µA 15000 µA 15000 µA
Maximum reverse recovery time 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs
surface mount NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER
Maker - Fuji Electric Co., Ltd. Fuji Electric Co., Ltd. Fuji Electric Co., Ltd. Fuji Electric Co., Ltd.

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