MT46V32M8BG-75EL datasheet, PDF

MT46V32M8BG-75EL: DescriptionDDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60; Categorystorage storage; File Size2MB，93 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT46V32M8BG-75EL Overview

DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	BGA
package instruction	TBGA, BGA60,9X12,40/32
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.004 A
Maximum slew rate	0.35 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	8 mm

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