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IS75V16F64GS32-7070DI

Description
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA65, 9 X 9 MM, 0.80 MM PITCH, FBGA-65
Categorystorage    storage   
File Size238KB,52 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS75V16F64GS32-7070DI Overview

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA65, 9 X 9 MM, 0.80 MM PITCH, FBGA-65

IS75V16F64GS32-7070DI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instruction9 X 9 MM, 0.80 MM PITCH, FBGA-65
Contacts65
Reach Compliance Codecompliant
Maximum access time70 ns
Other featuresALSO CONTAINS 32MBIT PSEUDO SRAM
JESD-30 codeS-PBGA-B65
JESD-609 codee0
length9 mm
memory density67108864 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+SRAM
Number of functions1
Number of terminals65
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA65,10X10,32
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3 V
Certification statusNot Qualified
Maximum seat height1.34 mm
Maximum standby current0.005 A
Maximum slew rate0.053 mA
Maximum supply voltage (Vsup)3.1 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)2.9 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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