Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA65, 9 X 9 MM, 0.80 MM PITCH, FBGA-65
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Integrated Silicon Solution ( ISSI ) |
Parts packaging code | BGA |
package instruction | 9 X 9 MM, 0.80 MM PITCH, FBGA-65 |
Contacts | 65 |
Reach Compliance Code | compliant |
Maximum access time | 70 ns |
Other features | ALSO CONTAINS 32MBIT PSEUDO SRAM |
JESD-30 code | S-PBGA-B65 |
JESD-609 code | e0 |
length | 9 mm |
memory density | 67108864 bit |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+SRAM |
Number of functions | 1 |
Number of terminals | 65 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -30 °C |
organize | 4MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LFBGA |
Encapsulate equivalent code | BGA65,10X10,32 |
Package shape | SQUARE |
Package form | GRID ARRAY, LOW PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 3 V |
Certification status | Not Qualified |
Maximum seat height | 1.34 mm |
Maximum standby current | 0.005 A |
Maximum slew rate | 0.053 mA |
Maximum supply voltage (Vsup) | 3.1 V |
Minimum supply voltage (Vsup) | 2.7 V |
Nominal supply voltage (Vsup) | 2.9 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 9 mm |