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NQ28C256K-150

Description
EEPROM, 32KX8, 150ns, Parallel, CMOS, PQCC32
Categorystorage    storage   
File Size280KB,8 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

NQ28C256K-150 Overview

EEPROM, 32KX8, 150ns, Parallel, CMOS, PQCC32

NQ28C256K-150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLSC/CSI
package instructionQCCJ, LDCC32,.5X.6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time150 ns
Other features1000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
command user interfaceNO
Data pollingYES
Data retention time - minimum10
Durability1000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum standby current0.0002 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
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